BUK207-50Y118 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
From NXP
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain-source On Resistance-Max | 0.2200 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Surface Mount | Yes |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
