BLA6H0912-500 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
From NXP
| Status | ACTIVE |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| China RoHS Compliant | Yes |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 54 A |
| EU RoHS Compliant | Yes |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | L BAND |
| Lead Free | Yes |
| Mfr Package Description | ROHS COMPLIANT, CERAMIC PACKAGE-2 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Surface Mount | Yes |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Type | RF POWER |
