933978520112
2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

From NXP

StatusEOL/LIFEBUY
Case ConnectionSOURCE
Channel TypeN-CHANNEL
ConfigurationCOMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min110 V
Drain Current-Max (ID)18 A
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Highest Frequency BandVERY HIGH FREQUENCY BAND
Lead FreeYes
Mfr Package DescriptionCERAMIC PACKAGE-4
Number of Elements2
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor TypeRF POWER

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