NT5TU512T4DY-3C
512M X 4 DDR DRAM, 0.45 ns, PBGA63

From Nanya Technology Corporation

StatusACTIVE-UNCONFIRMED
Access ModeMULTI BANK PAGE BURST
Access Time-Max (tRAC)0.4500 ns
Memory Density2.15E9 deg
Memory IC TypeDDR DRAM
Memory Width4
Mfr Package DescriptionBGA-63
Number of Functions1
Number of Ports1
Number of Terminals63
Number of Words5.37E8 words
Number of Words Code512M
Operating ModeSYNCHRONOUS
Organization512M X 4
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)1.9 V
Supply Voltage-Min (Vsup)1.7 V
Supply Voltage-Nom (Vsup)1.8 V
Surface MountYes
TechnologyCMOS
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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