NT5TB128M8DE-3C
128M X 8 DDR DRAM, 0.45 ns, PBGA60

From Nanya Technology Corporation

StatusACTIVE
Access ModeMULTI BANK PAGE BURST
Access Time-Max (tRAC)0.4500 ns
Memory Density1.07E9 deg
Memory IC TypeDDR DRAM
Memory Width8
Mfr Package Description0.80 MM PITCH, ROHS COMPLIANT, BGA-60
Number of Functions1
Number of Ports1
Number of Terminals60
Number of Words1.34E8 words
Number of Words Code128M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min0.0 Cel
Organization128M X 8
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)1.63 V
Supply Voltage-Min (Vsup)1.42 V
Supply Voltage-Nom (Vsup)1.5 V
Surface MountYes
TechnologyCMOS
Temperature GradeOTHER
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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