NT5CC512M8BN-DI
512M X 8 DDR DRAM, PBGA78

From Nanya Technology Corporation

StatusACTIVE
Access ModeMULTI BANK PAGE BURST
Memory Density4.29E9 deg
Memory IC TypeDDR DRAM
Memory Width8
Mfr Package Description0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-78
Number of Functions1
Number of Ports1
Number of Terminals78
Number of Words5.37E8 words
Number of Words Code512M
Operating ModeSYNCHRONOUS
Organization512M X 8
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)1.45 V
Supply Voltage-Min (Vsup)1.28 V
Supply Voltage-Nom (Vsup)1.35 V
Surface MountYes
TechnologyCMOS
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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