NT5CB64M16AP-DH
64M X 16 DDR DRAM, PBGA96

From Nanya Technology Corporation

StatusACTIVE
Access ModeMULTI BANK PAGE BURST
Memory Density1.07E9 deg
Memory IC TypeDDR DRAM
Memory Width16
Mfr Package Description0.80 MM PITCH, ROHS COMPLIANT, WBGA-96
Number of Functions1
Number of Ports1
Number of Terminals96
Number of Words6.71E7 words
Number of Words Code64M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min0.0 Cel
Organization64M X 16
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY
Supply Voltage-Max (Vsup)1.58 V
Supply Voltage-Min (Vsup)1.42 V
Supply Voltage-Nom (Vsup)1.5 V
Surface MountYes
TechnologyCMOS
Temperature GradeOTHER
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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