NT5CB256M8BN-CF
256M X 8 DDR DRAM, PBGA78

From Nanya Technology Corporation

StatusACTIVE
Access ModeMULTI BANK PAGE BURST
Memory Density2.15E9 deg
Memory IC TypeDDR DRAM
Memory Width8
Mfr Package Description0.80 MM PITCH, ROHS COMPLIANT, WBGA-78
Number of Functions1
Number of Ports1
Number of Terminals78
Number of Words2.68E8 words
Number of Words Code256M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min0.0 Cel
Organization256M X 8
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)1.58 V
Supply Voltage-Min (Vsup)1.42 V
Supply Voltage-Nom (Vsup)1.5 V
Surface MountYes
TechnologyCMOS
Temperature GradeOTHER
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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