JANS2N6770 12 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
From Microsemi Corp.
Status | ACTIVE |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 500 V |
Drain Current-Max (ID) | 12 A |
Drain-source On Resistance-Max | 0.4000 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT |
Package Body Material | METAL |
Package Shape | ROUND |
Package Style | FLANGE MOUNT |
Terminal Finish | TIN LEAD |
Terminal Form | PIN/PEG |
Terminal Position | BOTTOM |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |