JAN1N5618US DIODE GEN PURP 600V 1A D5A
From Microsemi HI-REL [MIL]
Capacitance @ Vr, F | - |
Category | Discrete Semiconductor Products |
Current - Average Rectified (Io) | 1A |
Current - Reverse Leakage @ Vr | 500nA @ 600V |
Datasheets | 1N5614US thru 1N5622US |
Diode Type | Standard |
Family | Diodes, Rectifiers - Single |
Mounting Type | Surface Mount |
Operating Temperature - Junction | -65°C ~ 200°C |
Other Names | 1086-2109 |
Package / Case | SQ-MELF, A |
Packaging | Bulk |
Reverse Recovery Time (trr) | 2µs |
Series | Military, MIL-PRF-19500/429 |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Standard Package | 1 |
Supplier Device Package | D-5A |
Voltage - DC Reverse (Vr) (Max) | 600V |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 3A |