APTM20AM10FT 175 A, 200 V, 0.012 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From Microsemi Corp.
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 2500 mJ |
Case Connection | ISOLATED |
Channel Type | N-CHANNEL |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (ID) | 175 A |
Drain-source On Resistance-Max | 0.0120 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | MODULE-12 |
Number of Elements | 2 |
Number of Terminals | 12 |
Operating Mode | ENHANCEMENT |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Pulsed Drain Current-Max (IDM) | 700 A |
Terminal Finish | TIN LEAD |
Terminal Form | UNSPECIFIED |
Terminal Position | UPPER |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |