APTM20AM10FT
175 A, 200 V, 0.012 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

From Microsemi Corp.

StatusACTIVE
Avalanche Energy Rating (Eas)2500 mJ
Case ConnectionISOLATED
Channel TypeN-CHANNEL
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)175 A
Drain-source On Resistance-Max0.0120 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionMODULE-12
Number of Elements2
Number of Terminals12
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)700 A
Terminal FinishTIN LEAD
Terminal FormUNSPECIFIED
Terminal PositionUPPER
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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