APT11044B2FLL 26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET
From Microsemi Corp.
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 3000 mJ |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 1100 V |
Drain Current-Max (ID) | 26 A |
Drain-source On Resistance-Max | 0.4400 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | B2, TMAX-3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | IN-LINE |
Pulsed Drain Current-Max (IDM) | 104 A |
Terminal Finish | TIN LEAD |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |