1N5553US DIODE GEN PURP 800V 3A B-MELF
From Microsemi Commercial Components Group
| Capacitance @ Vr, F | - |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 1µA @ 800V |
| Datasheets | 1N5550US thru 1N5554US |
| Diode Type | Standard |
| Family | Diodes, Rectifiers - Single |
| Mounting Type | Surface Mount |
| Online Catalog | Standard Diode |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Package / Case | SQ-MELF, B |
| Packaging | Bulk |
| Product Photos | 1N6643US |
| Reverse Recovery Time (trr) | 2µs |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Standard Package | 1 |
| Supplier Device Package | B, SQ-MELF |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 9A |
