ME1100
Si NPN Lo-Pwr BJT

From Micro Electronics

StatusDiscontinued
@I(C) (A) (Test Condition)10m
@V(CE) (V) (Test Condition)10
Absolute Max. Power Diss. (W)200m
C(obo) (Max) (F)4.0p
I(C) Abs.(A) Collector Current200m
I(CBO) Max. (A)6.0u
MilitaryN
PackageTO-106
V(BR)CBO (V)110
V(BR)CEO (V)100
f(T) Min. (Hz) Transition Freq60M
h(FE) Min. Static Current Gain20

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