JANTXV2N7334 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB
From International Rectifier
| Status | ACTIVE |
| Avalanche Energy Rating (Eas) | 75 mJ |
| Channel Type | N-CHANNEL |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 1 A |
| Drain-source On Resistance-Max | 0.8000 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | HERMETIC SEALED PACKAGE-14 |
| Number of Elements | 4 |
| Number of Terminals | 14 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Pulsed Drain Current-Max (IDM) | 4 A |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
