IRHMS597260PBF
32 A, 200 V, 0.103 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)354 mJ
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)32 A
Drain-source On Resistance-Max0.1030 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionHEMETIC SEALED PACKAGE-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)128 A
Terminal FinishNOT SPECIFIED
Terminal FormPIN/PEG
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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