IRFB7434GPBF
MOSFET N CH 40V 195A TO220AB

From International Rectifier

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C195A (Tc)
Drain to Source Voltage (Vdss)40V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs324nC @ 10V
Input Capacitance (Ciss) @ Vds10820pF @ 25V
Mounting TypeThrough Hole
PCN Assembly/OriginMosfet Backend Wafer Processing 23/Oct/2013 Additional Assembly Site 09/Dec/2013
PCN PackagingPackage Drawing Update 19/Aug/2015
Package / CaseTO-220-3
PackagingTube
Power - Max294W
Product PhotosTO-220AB PKG
Product Training ModulesHigh Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below
Rds On (Max) @ Id, Vgs1.6 mOhm @ 100A, 10V
SeriesHEXFET®, StrongIRFET™
Standard Package50
Supplier Device PackageTO-220-3
Vgs(th) (Max) @ Id3.9V @ 250µA

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