IRF630NLPBF MOSFET N-CH 200V 9.3A TO-262
From International Rectifier
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Datasheets | IRF630N |
| Drain to Source Voltage (Vdss) | 200V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 575pF @ 25V |
| Mounting Type | Through Hole |
| Other Names | *IRF630NLPBF |
| PCN Obsolescence/ EOL | Multiple Devices 25/Apr/2014 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Packaging | Tube |
| Power - Max | 82W |
| Product Photos | HEXFET TO-262-3 Long Leads |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 5.4A, 10V |
| Series | HEXFET® |
| Standard Package | 50 |
| Supplier Device Package | TO-262 |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
