AUIRF9Z34N
19 A, 55 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)180 mJ
Case ConnectionDRAIN
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min55 V
Drain Current-Max (ID)19 A
Drain-source On Resistance-Max0.1000 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionROHS COMPLIANT, PLASTIC PACKAGE-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)68 A
Terminal FinishMATTE TIN OVER NICKEL
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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