SPD02N60C3 MOSFET N-CH 650V 1.8A DPAK
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Datasheets | SP(D,U)02N60C3 |
| Drain to Source Voltage (Vdss) | 650V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 12.5nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 200pF @ 25V |
| Mounting Type | Surface Mount |
| Other Names | SPD02N60C3INCT |
| PCN Packaging | Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Cut Tape (CT) |
| Power - Max | 25W |
| Product Photos | TO252-3 |
| Product Training Modules | CoolMOS™ CP High Voltage MOSFETs Converters |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 1.1A, 10V |
| Series | CoolMOS™ |
| Standard Package | 1 |
| Supplier Device Package | PG-TO252-3 |
| Vgs(th) (Max) @ Id | 3.9V @ 80µA |
