PTFB182503FLV2R250 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
From Infineon Technologies AG
Status | ACTIVE |
Case Connection | SOURCE |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 65 V |
EU RoHS Compliant | Yes |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band | L BAND |
Lead Free | Yes |
Mfr Package Description | GREEN, H-34288-4/2, 4 PIN |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | RECTANGULAR |
Package Style | FLATPACK |
Surface Mount | Yes |
Terminal Finish | GOLD (10) |
Terminal Form | UNSPECIFIED |
Terminal Position | QUAD |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Transistor Type | RF POWER |