IPI034NE7N3G 100 A, 75 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
From Infineon Technologies AG
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 640 mJ |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 75 V |
Drain Current-Max (ID) | 100 A |
Drain-source On Resistance-Max | 0.0034 ohm |
EU RoHS Compliant | Yes |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Lead Free | Yes |
Mfr Package Description | GREEN, PLASTIC, TO-262, I2PAK-3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | IN-LINE |
Pulsed Drain Current-Max (IDM) | 400 A |
Terminal Finish | NOT SPECIFIED |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |