IPI034NE7N3G
100 A, 75 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA

From Infineon Technologies AG

StatusACTIVE
Avalanche Energy Rating (Eas)640 mJ
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min75 V
Drain Current-Max (ID)100 A
Drain-source On Resistance-Max0.0034 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionGREEN, PLASTIC, TO-262, I2PAK-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleIN-LINE
Pulsed Drain Current-Max (IDM)400 A
Terminal FinishNOT SPECIFIED
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links