IPD60R750E6ATMA1 MOSFET N-CH 600V 5.7A TO252
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Datasheets | IPx60R750E6 |
| Drain to Source Voltage (Vdss) | 600V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 17.2nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 373pF @ 100V |
| Mounting Type | Surface Mount |
| Other Names | SP001117728 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 48W |
| Product Photos | TO252-3 |
| Rds On (Max) @ Id, Vgs | 750 mOhm @ 2A, 10V |
| Series | CoolMOS™ E6 |
| Standard Package | 2,500 |
| Supplier Device Package | PG-TO252-3 |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA |
