IGC109T120T6RL 1200 V, N-CHANNEL IGBT
From Infineon Technologies AG
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Collector-emitter Voltage-Max | 1200 V |
| Configuration | SINGLE |
| Mfr Package Description | 14.61 X 7.48 MM, DIE-6 |
| Number of Elements | 1 |
| Number of Terminals | 6 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | UNCASED CHIP |
| Surface Mount | Yes |
| Terminal Form | NO LEAD |
| Terminal Position | UPPER |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Transistor Type | INSULATED GATE BIPOLAR |
