FF900R12IP4D 1200 V, N-CHANNEL IGBT
From Infineon Technologies AG
Status | ACTIVE |
Case Connection | ISOLATED |
Channel Type | N-CHANNEL |
Collector-emitter Voltage-Max | 1200 V |
Configuration | SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR |
EU RoHS Compliant | Yes |
Lead Free | Yes |
Mfr Package Description | MODULE-11 |
Number of Elements | 2 |
Number of Terminals | 7 |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Terminal Finish | NOT SPECIFIED |
Terminal Form | UNSPECIFIED |
Terminal Position | UPPER |
Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON |
Transistor Type | INSULATED GATE BIPOLAR |
Turn-off Time-Nom (toff) | 1300 ns |
Turn-on Time-Nom (ton) | 370 ns |