FF200R33KF2C 330 A, 3300 V, N-CHANNEL IGBT
From Infineon Technologies AG
Status | ACTIVE |
Case Connection | ISOLATED |
Channel Type | N-CHANNEL |
Collector Current-Max (IC) | 330 A |
Collector-emitter Voltage-Max | 3300 V |
Configuration | SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE |
Mfr Package Description | MODULE-8 |
Number of Elements | 2 |
Number of Terminals | 8 |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Terminal Finish | MATTE TIN |
Terminal Form | UNSPECIFIED |
Terminal Position | UPPER |
Transistor Element Material | SILICON |
Transistor Type | INSULATED GATE BIPOLAR |
Turn-off Time-Nom (toff) | 1900 ns |
Turn-on Time-Nom (ton) | 480 ns |