BSS83PH6327 330 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From Infineon Technologies AG
Status | ACTIVE |
Channel Type | P-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 0.3300 A |
Drain-source On Resistance-Max | 3 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 9 pF |
Mfr Package Description | GREEN, PLASTIC PACKAGE-3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Power Dissipation Ambient-Max | 0.3600 W |
Surface Mount | Yes |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE SMALL SIGNAL |