BSP324
0.17 A, 400 V, 25 ohm, N-CHANNEL, Si, POWER, MOSFET

From Infineon Technologies AG

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min400 V
Drain Current-Max (ID)0.1700 A
Drain-source On Resistance-Max25 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionSOT-223, 4 PIN
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max1.8 W
Pulsed Drain Current-Max (IDM)0.6800 A
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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