BSP322PH6327XTSA1
MOSFET P-CH 100V 1A SOT-223

From Infineon Technologies

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C1A (Tc)
DatasheetsBSP322P
Drain to Source Voltage (Vdss)100V
FET FeatureLogic Level Gate
FET TypeMOSFET P-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs16.5nC @ 10V
Input Capacitance (Ciss) @ Vds372pF @ 25V
Mounting Type*
Other NamesBSP322PH6327XTSA1TR SP001058784
Package / Case*
Packaging*
Power - Max1.8W
Rds On (Max) @ Id, Vgs800 mOhm @ 1A, 10V
SeriesSIPMOS®
Standard Package1,000
Supplier Device Package*
Vgs(th) (Max) @ Id1V @ 380µA

External links