BSP322PH6327XTSA1 MOSFET P-CH 100V 1A SOT-223
From Infineon Technologies
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
Datasheets | BSP322P |
Drain to Source Voltage (Vdss) | 100V |
FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Family | FETs - Single |
Gate Charge (Qg) @ Vgs | 16.5nC @ 10V |
Input Capacitance (Ciss) @ Vds | 372pF @ 25V |
Mounting Type | * |
Other Names | BSP322PH6327XTSA1TR SP001058784 |
Package / Case | * |
Packaging | * |
Power - Max | 1.8W |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 1A, 10V |
Series | SIPMOS® |
Standard Package | 1,000 |
Supplier Device Package | * |
Vgs(th) (Max) @ Id | 1V @ 380µA |