BSM50GP120
IGBT Modules 1200V 50A PIM

From Infineon Technologies

BrandInfineon Technologies
Collector- Emitter Voltage VCEO Max1200 V
Collector-Emitter Saturation Voltage2.5 V
ConfigurationHex
Continuous Collector Current at 25 C80 A
Factory Pack Quantity500
Gate-Emitter Leakage Current300 nA
ManufacturerInfineon
Maximum Gate Emitter Voltage+/- 20 V
Maximum Operating Temperature+ 125 C
Minimum Operating Temperature- 40 C
Mounting StyleScrew
Package / CaseEconoPIM3
Pd - Power Dissipation360 W
ProductIGBT Silicon Modules
Product CategoryIGBT Modules
RoHSDetails

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