H5PS1G83EFR-E3P
128M X 8 DDR DRAM, 0.6 ns, PBGA60

From SK Hynix

StatusACTIVE
Access ModeMULTI BANK PAGE BURST
Access Time-Max (tRAC)0.6000 ns
Memory Density1.07E9 deg
Memory IC TypeDDR DRAM
Memory Width8
Mfr Package DescriptionHALOGEN FREE AND ROHS COMPLIANT, FBGA-60
Number of Functions1
Number of Ports1
Number of Terminals60
Number of Words1.34E8 words
Number of Words Code128M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min0.0 Cel
Organization128M X 8
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)1.9 V
Supply Voltage-Min (Vsup)1.7 V
Supply Voltage-Nom (Vsup)1.8 V
Surface MountYes
Temperature GradeOTHER
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

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