2SJ120 P-Channel Enhancement MOSFET
From Hitachi Semiconductor
| @(VDS) (V) (Test Condition) | 20 |
| @I(D) (A) (Test Condition) | 1.0 |
| @V(DS) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 10 |
| C(iss) Max. (F) | 150p |
| I(D) Abs. Drain Current (A) | 2.0 |
| I(DSS) Min. (A) | 1.0m |
| I(GSS) Max. (A) | 1.0u |
| Military | N |
| Package | TO-252var |
| V(BR)DSS (V) | 40 |
| V(BR)GSS (V) | 20 |
| g(fs) Max, (S) Trans. conduct, | .25 |
| g(fs) Min. (S) Trans. conduct. | 0.1 |
| r(DS)on Max. (Ohms) | 1.2 |
| t(f) Max. (s) Fall time. | 23n |
| t(r) Max. (s) Rise time | 25n |
