HUF76143S3
N-Channel Enhancement MOSFET

From Harris Semiconductor

@(VDS) (V) (Test Condition)16
@Freq. (Hz) (Test Condition)1.0M
@I(D) (A) (Test Condition)75
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)4.5
Absolute Max. Power Diss. (W)270
C(iss) Max. (F)3.9n
I(D) Abs. Drain Current (A)75
I(DSS) Max. (A)1.0u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-262AA
Thermal Resistance Junc-Amb.62
V(BR)DSS (V)30
V(BR)GSS (V)16
V(GS)th Max. (V)3.0
V(GS)th Min. (V)1.0
r(DS)on Max. (Ohms)8.5m
t(d)off Max. (s) Off time40n
t(f) Max. (s) Fall time.18n
t(r) Max. (s) Rise time55n
td(on) Max (s) On time delay14n

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