HUF76139S3
N-Channel Enhancement MOSFET

From Harris Semiconductor

@(VDS) (V) (Test Condition)16
@Freq. (Hz) (Test Condition)1.0M
@I(D) (A) (Test Condition)72
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)4.5
Absolute Max. Power Diss. (W)200
C(iss) Max. (F)2.7n
I(D) Abs. Drain Current (A)75
I(DSS) Max. (A)1.0u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-262AA
Thermal Resistance Junc-Amb.62
V(BR)DSS (V)30
V(BR)GSS (V)16
V(GS)th Max. (V)3.0
V(GS)th Min. (V)1.0
r(DS)on Max. (Ohms)11m
t(d)off Max. (s) Off time90n
t(f) Max. (s) Fall time.55n
t(r) Max. (s) Rise time65n
td(on) Max (s) On time delay16n

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