HUF76137S3
N-Channel Enhancement MOSFET

From Harris Semiconductor

StatusDiscontinued
@(VDS) (V) (Test Condition)16
@Freq. (Hz) (Test Condition)1.0M
@I(D) (A) (Test Condition)59
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)4.5
Absolute Max. Power Diss. (W)175
C(iss) Max. (F)2.1n
I(D) Abs. Drain Current (A)75
I(DSS) Max. (A)1.0u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-262AA
Thermal Resistance Junc-Amb.62
V(BR)DSS (V)30
V(BR)GSS (V)16
V(GS)th Max. (V)3.0
V(GS)th Min. (V)1.0
r(DS)on Max. (Ohms)14m
t(d)off Max. (s) Off time28n
t(f) Max. (s) Fall time.38n
t(r) Max. (s) Rise time260n
td(on) Max (s) On time delay20n

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