HUF76129S3
N-Channel Enhancement MOSFET

From Harris Semiconductor

@(VDS) (V) (Test Condition)16
@Freq. (Hz) (Test Condition)1.0M
@I(D) (A) (Test Condition)61
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)4.5
Absolute Max. Power Diss. (W)105
C(iss) Max. (F)1.3n
I(D) Abs. Drain Current (A)61
I(D) Abs. Max.(A) Drain Curr.43
I(DSS) Max. (A)1.0u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-262AA
Thermal Resistance Junc-Amb.62
V(BR)DSS (V)30
V(BR)GSS (V)16
V(GS)th Max. (V)3.0
V(GS)th Min. (V)1.0
r(DS)on Max. (Ohms)22m
t(d)off Max. (s) Off time25n
t(f) Max. (s) Fall time.28n
t(r) Max. (s) Rise time82n
td(on) Max (s) On time delay15n

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