HUF76129S3 N-Channel Enhancement MOSFET
From Harris Semiconductor
@(VDS) (V) (Test Condition) | 16 |
@Freq. (Hz) (Test Condition) | 1.0M |
@I(D) (A) (Test Condition) | 61 |
@Temp (°C) (Test Condition) | 25 |
@V(DS) (V) (Test Condition) | 25 |
@V(GS) (V) (Test Condition) | 4.5 |
Absolute Max. Power Diss. (W) | 105 |
C(iss) Max. (F) | 1.3n |
I(D) Abs. Drain Current (A) | 61 |
I(D) Abs. Max.(A) Drain Curr. | 43 |
I(DSS) Max. (A) | 1.0u |
I(GSS) Max. (A) | 100n |
Military | N |
Package | TO-262AA |
Thermal Resistance Junc-Amb. | 62 |
V(BR)DSS (V) | 30 |
V(BR)GSS (V) | 16 |
V(GS)th Max. (V) | 3.0 |
V(GS)th Min. (V) | 1.0 |
r(DS)on Max. (Ohms) | 22m |
t(d)off Max. (s) Off time | 25n |
t(f) Max. (s) Fall time. | 28n |
t(r) Max. (s) Rise time | 82n |
td(on) Max (s) On time delay | 15n |