MT101B P-Channel Enhancement MOSFET
From GEC Plessey Semiconductors
| Status | Discontinued |
| @(VDS) (V) (Test Condition) | 25 |
| @I(D) (A) (Test Condition) | 1.0m |
| @V(DS) (V) (Test Condition) | 6.5 |
| Absolute Max. Power Diss. (W) | 200m |
| C(iss) Max. (F) | 6.9p |
| I(DSS) Min. (A) | 20n |
| Military | N |
| Package | Can |
| V(BR)DSS (V) | 25 |
| V(BR)GSS (V) | 25 |
| g(fs) Max, (S) Trans. conduct, | 850u |
| g(fs) Min. (S) Trans. conduct. | 650u |
| r(DS)on Max. (Ohms) | 470 |
