MURT10060R DIODE ARRAY GP REV POLAR 3TOWER
From GeneSiC Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) (per Diode) | 100A (DC) |
| Current - Reverse Leakage @ Vr | 25µA @ 50V |
| Datasheets | MURT10040 thru 10060R Three Tower Pkg Drawing |
| Diode Configuration | - |
| Diode Type | Standard, Reverse Polarity |
| Family | Diodes, Rectifiers - Arrays |
| Mounting Type | Chassis Mount |
| Other Names | MURT10060RGN |
| Package / Case | Three Tower |
| Packaging | Bulk |
| Reverse Recovery Time (trr) | 75ns |
| Series | - |
| Speed | Fast Recovery = 200mA (Io) |
| Standard Package | 25 |
| Supplier Device Package | Three Tower |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 100A |
