1N8031-GA DIODE SCHOTTKY 650V 1A TO276
From GeneSiC Semiconductor
| Capacitance @ Vr, F | 76pF @ 1V, 1MHz |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5µA @ 650V |
| Datasheets | 1N8031-GA |
| Design Resources | 1N8031-GA Spice Model |
| Diode Type | Silicon Carbide Schottky |
| Family | Diodes, Rectifiers - Single |
| Mounting Type | Through Hole |
| Online Catalog | Silicon Carbide Power Schottky Diode |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Other Names | 1242-1118 1N8031GA |
| Package / Case | TO-276AA |
| Packaging | Tube |
| Product Photos | 1N803x-GA |
| Reverse Recovery Time (trr) | 0ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |
| Standard Package | 10 |
| Supplier Device Package | TO-276 |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Voltage - Forward (Vf) (Max) @ If | 1.5V @ 1A |
