FPD13R51JT Avalanche-Type Photodiode
From Fujitsu
| @V(R) (V) (Test Condition) | 27 |
| @Wavelength(m)(Test Condition) | 1.3u |
| C(T) Max. (F) Capacitance | 1.5p |
| Ioff Max.(A) Off-state Current | 300n |
| Package | ModuleC |
| Photosensitive Area (mm2) | .002 |
| Semiconductor Material | Germanium |
| V(R) Max.(V) Reverse Voltage | 20 |
