FMH11N90E IC, MOSFET; N-Channel, FAP-E3 Planar; 900V; 11A; 285W; TO-3P(Q)
From Fuji Semiconductor
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Dimensions | 15.5 x 4.5 x 19.5 mm |
| Forward Diode Voltage | 1.35 V |
| Forward Transconductance | 13 S |
| Height | 19.5 mm |
| Length | 15.5 mm |
| Maximum Continuous Drain Current | ±11 A |
| Maximum Drain Source Resistance | 1 Ω |
| Maximum Drain Source Voltage | 900 V |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 285 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-3P |
| Pin Count | 3 |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V |
| Typical Input Capacitance @ Vds | 2300 pF @ 25 V |
| Typical Turn On Delay Time | 37 ns |
| Typical TurnOff Delay Time | 124 ns |
| Width | 4.5 mm |
