MTP4N20
N-Channel Enhancement MOSFET

From Motorola

StatusDiscontinued
@(VDS) (V) (Test Condition)20
@I(D) (A) (Test Condition)2.0
@V(DS) (V) (Test Condition)15
Absolute Max. Power Diss. (W)50
C(iss) Max. (F)400p
I(D) Abs. Drain Current (A)4.0
I(DSS) Min. (A)1.0m
I(GSS) Max. (A)100n
MilitaryN
PackageTO-220AB
V(BR)DSS (V)200
V(BR)GSS (V)20
g(fs) Min. (S) Trans. conduct.750m
r(DS)on Max. (Ohms)1.2
t(f) Max. (s) Fall time.50n
t(r) Max. (s) Rise time20n

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