FQG4904 0.46 A, 400 V, 3 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
From Fairchild Semiconductor Corporation
| Status | DISCONTINUED |
| Channel Type | N-CHANNEL AND P-CHANNEL |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 400 V |
| Drain Current-Max (ID) | 0.4600 A |
| Drain-source On Resistance-Max | 3 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | DIP-8 |
| Number of Elements | 2 |
| Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Power Dissipation Ambient-Max | 1.6 W |
| Pulsed Drain Current-Max (IDM) | 3.68 A |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
