FQG4902
0.54 A, 250 V, 2 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET

From Fairchild Semiconductor Corporation

StatusDISCONTINUED
Channel TypeN-CHANNEL AND P-CHANNEL
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min250 V
Drain Current-Max (ID)0.5400 A
Drain-source On Resistance-Max2 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionDIP-8
Number of Elements2
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleIN-LINE
Power Dissipation Ambient-Max1.4 W
Pulsed Drain Current-Max (IDM)4.32 A
Terminal FormTHROUGH-HOLE
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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