FDN5618P MOSFET P-CH 60V 1.25A SSOT3
From Fairchild Semiconductor
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 1.25A (Ta) |
Datasheets | FDN5618P Molded Pkg, SUPERSOT, 3 Lead Drawing |
Drain to Source Voltage (Vdss) | 60V |
FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Family | FETs - Single |
Gate Charge (Qg) @ Vgs | 13.8nC @ 10V |
Input Capacitance (Ciss) @ Vds | 430pF @ 30V |
Mounting Type | Surface Mount |
Online Catalog | P-Channel Logic Level Gate FETs |
Other Names | FDN5618PTR |
PCN Design/Specification | Wire Bonding 07/Nov/2008 Mold Compound 08/April/2008 |
PCN Packaging | Binary Year Code Marking 15/Jan/2014 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Packaging | Tape & Reel (TR) |
Power - Max | 460mW |
Product Photos | SOT-23-3 |
Product Training Modules | High Voltage Switches for Power Processing |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 1.25A, 10V |
Series | PowerTrench® |
Standard Package | 3,000 |
Supplier Device Package | 3-SSOT |
Vgs(th) (Max) @ Id | 3V @ 250µA |