Product Datasheet Search Results:

FS2VS-18A-T1.pdf4 Pages, 179 KB, Scan
FS2VS-18A-T1
Mitsubishi Electric & Electronics Usa, Inc.
2 A, 900 V, 7.3 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Mitsubishichips.com/FS2VS-18A-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"900 V","Transistor Application":"SWITCHING","Surface Mo...
1500 Bytes - 22:44:54, 29 November 2024

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