Product Datasheet Search Results:
4 Pages, 42 KB, Original- FS2VS-16A
- Mitsubishi Electric & Electronics Usa, Inc.
- 2 A, 800 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 175 KB, Scan- FS2VS-16A-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 2 A, 800 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 175 KB, Scan- FS2VS-16A-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 2 A, 800 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 42 KB, Original- FS2VS-16A
- Powerex Power Semiconductors
- Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Product Details Search Results:
Mitsubishichips.com/FS2VS-16A
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"6 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"2 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECT...
1433 Bytes - 22:33:35, 29 November 2024
Mitsubishichips.com/FS2VS-16A-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"800 V","Transistor Application":"SWITCHING","Surface Moun...
1495 Bytes - 22:33:35, 29 November 2024
Mitsubishichips.com/FS2VS-16A-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"800 V","Transistor Application":"SWITCHING","Surface Moun...
1494 Bytes - 22:33:35, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| TGL41-16A.pdf | 0.23 | 1 | Request | |
| SKB50-16A3.pdf | 0.27 | 1 | Request | |
| SKD30-16A1.pdf | 0.24 | 1 | Request | |
| SKD50-16A3.pdf | 0.24 | 1 | Request | |
| SKB30-16A1.pdf | 0.45 | 1 | Request | |
| AS4201F-04-16A.pdf | 7.81 | 1 | Request | |
| Y-16A.pdf | 10.84 | 1 | Request | |
| LVP51-16AN.pdf | 0.51 | 1 | Request | |
| KQ2R10-16A.pdf | 38.99 | 1 | Request | |
| AS4211F-N04-16A.pdf | 7.81 | 1 | Request | |
| KQ2L12-16A-X35.pdf | 38.99 | 1 | Request | |
| I-16A.pdf | 10.84 | 1 | Request |
