VTP8350H
SILICON PHOTODIODES

From Excelitas Technologies Sensors

Active Area0.012 sq.in.
Angle, Response±60 °
Capacitance, Junction50 pF
Current, Dark30 nA
Current, Short Circuit80 μA
Package TypeCase 11
Primary TypePhoto
Resistance, Shunt100 Gigaohms
Spectral Application Range400 to 1150 nm
Spectral Sensitivity0.55 A/W
Temperature, Operating-20 to +75 °C
Voltage, Breakdown140 V
Voltage, Open Circuit350 mV

External links