VTB8441BH
SILICON PHOTODIODES

From Excelitas Technologies Sensors

Active Area0.008 sq.in.
Angle, Response±50 °
Capacitance, Junction1 nF
Current, Dark100 pA
Current, Short Circuit5 μA
Package TypeCase 21F
Primary TypePhoto
Resistance, Shunt1.4 Gigaohms
Spectral Application Range330 to 720 nm
Temperature, Operating-20 to +75 °C
Voltage, Breakdown40 V
Voltage, Open Circuit420 mV

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