VTB6061H SILICON PHOTODIODES
From Excelitas Technologies Sensors
| Active Area | 0.058 sq.in. |
| Angle, Response | ±55 ° |
| Capacitance, Junction | 8 nF |
| Current, Dark | 2 pA |
| Current, Short Circuit | 350 μA |
| Package Type | TO-8 |
| Primary Type | Photo |
| Resistance, Shunt | 0.1 Gigaohms |
| Spectral Application Range | 320 to 1100 nm |
| Spectral Sensitivity | 0.1 A/W |
| Temperature, Operating | -40 to +110 °C |
| Voltage, Breakdown | 40 V |
| Voltage, Open Circuit | 490 mV |
